features trenchfet power mosfet applications direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, t ransistors, etc. battery operated systems solid-state relays 1 n-channel 16 v (d ? s) mosfet product summar y v ( br) dss r ds ( ) i d (a) v ( br) dss min (v) r d s (on) max ( ) v g s (th) (v) DTS03K16 DTS03K16a 16 1.0 @ v gs = 10 v 1 0 to 3 0 0.42 0.64 16 1.4 @ v gs = 4.5 v 1.0 to 3.0 0.35 0.53 absolute maximum ra tings (t a = 25 c unless otherwise noted) limit parameter symbol DTS03K16 DTS03K16a unit drain-source v oltage v ds 16 v gate-source v oltage v gs 8 v continuous drain current (t j = 150 c) t a = 25 c i d 0.42 0.64 continuous drain current (t j = 150 c) t a = 70 c i d 0.33 0.51 a pulsed drain current a i dm 0.8 1.5 power dissipation t a = 25 c p d 0.35 0.8 w power dissipation t a = 70 c p d 0.22 0.51 w thermal resistance, junction-to-ambient r thj a 357 156 c/w operating junction and storage t emperature range t j , t st g ? 55 to 150 c notes a. pulse width limited by maximum junction temperature. g s d top v ie w 2 3 t o-236 (sot -23) 1 n -channel mosfet g d s www.din-tek.jp dt s 03k16
2 specifications (t a = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (b r)dss v gs = 0 v, i d = 10 a 16 v gate-threshold v oltage v gs(t h) v ds = v gs , i d = 0.25 ma 1.0 2.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 55 c 10 a on state drain current a i d( ) v ds = 10 v v gs = 10 v DTS03K16 0.5 a on-state drain current a i d(on) v ds = 10 v, v gs = 8 v DTS03K16a 0.8 a drain - source on - resistance a r ds( on) v gs = 4.5 v, i d = 0.1 a 0.8 1.4 drain - so u rce on - resistance a r ds( on) v gs = 10 v, i d = 0.3 a 0.47 1.0 forward t ransconductance a g fs v ds = 10 v, i d = 0.3 a 550 ms diode forward voltage v sd i s = 0.3 a, v gs = 0 v 0.85 1.2 v dynamic b total gate charge q g 1000 1500 gate-source charge q gs v ds = 16 v, v gs = 10 v i d 0.3 a 205 pc gate-drain charge q gd i d 0 . 3 a 200 gate resistance r g 48 turn on t i me t d(on) 4.5 8 turn-on ti m e t r v dd = 15 v, r l = 50 i d 03 a v gen = 10 v 8 15 ns turn - off t ime t d(off) i d 0.3 a , v gen = 10 v r g = 6 9 15 ns t urn- off t i me t f 6.3 12 notes a. pulse test: pw 300 s duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.4 0.8 1.2 1.6 2.0 v gs = 10 thru 5 v t j = 125 c ? 55 c 3 v 25 c output characteristics t ransfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 4 v 2 v z z z g l q w h n m s ' 7 6 .
3 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ? on-resistance ( r ds(on) ) 0 10 20 30 40 50 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.3 0.6 0.9 1.2 1.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 16 v i d = 0.3 a i d ? drain current (a) v gs = 4.5 v i d = 0.1 a v gs = 8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 4 8 12 14 16 t j = 150 c t j = 25 c i d = 0.3 a 3 0.1 0.001 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v v gs = 8 v i d = 0.3 a 1 0.01 www.din-tek.jp dt s 03k16
4 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient (to-236, DTS03K16 only) square wave pulse duration (sec) normalized effective transient thermal impedance safe operating area (to-236, DTS03K16 only) v ds ? drain-to-source voltage (v) 10 0.1 0.1 1 10 100 0.001 1 1 ms ? drain current (a) i d 0.01 t a = 25 c single pulse 10 ms 100 ms dc 1 s 10 s safe operating area (to-226aa, DTS03K16a only) i d(on) limited r ds( on) limited bv dss limited v ds ? drain-to-source voltage (v) 10 0.1 0.1 1 10 100 0.001 1 1 ms ? drain current (a) i d 0.01 t a = 25 c single pulse 10 ms 100 ms dc 1 s 10 s i d(on) limited i dm limited r ds (on) limited i dm limited bv dss limited www.din-tek.jp dt s 03k16
5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient (to-226aa, DTS03K16a only) square wave pulse duration (sec) normalized effe ctive transient thermal impedance www.din-tek.jp dt s 03k16
1 sot-23 ( t o-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimet ers inches mi n max mi n max a 0 .89 1.12 0.0 35 0.044 a 1 0 .01 0.10 0.0004 0.004 a 2 0 .88 1.02 0.0 346 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1 .20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0 748 ref l 0 .40 0.60 0.016 0.024 l 1 0.6 4 ref 0. 025 ref s 0.50 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp
1 application note rec ommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index r etur n to index application note www.din-tek.jp
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